PM2000 Plasma Systems

Side view PM2000, with glove box (optional)

Front view ICP process chamber opened, with laser endpoint detection system

PM2000 with RIE/ICP process chamber and Laser end point detection system. Depending on your application it can be fitted either with a Reactive Ion Etch (RIE), a Inductive Coupled Plasma (ICP) or Plasma Enhanced Chemical Vapor Deposition (PECVD) process chamber.
The system is used for Semiconductor-, MEMS-, Packaging and Failure Analyses (FA) applications. Etching of silicon, nitrides, oxides, polymers, metals and compound semiconductors is accomplished safely and reproducibly in this reliable, cost efficient yet high performance system.
Your desired etch profile, whether anisotropic requiring high aspect ratios, or sloped walls, is achieved with the PM2000. The wide variety of etch profiles is achieved by applying a DC bias on the electrode, which can be fitted with an electrostatic chuck for optimal thermal control.

Etch Rates and Uniformity
Fast etch rates are achieved using solid state 600 watt generators and the unique chamber design which allows for upgrading from RIE to ICP at any later stage. The precise mixing of gases, pressure and power optimizes process selectivity. Mass flow controllers provide precise and reproducible gas flow. A load lock system is optionally available.

Computer control
The PM2000 is fully computer controlled using an industrial PC running Windows XP and an industrial field bus network. The system comes with an easy to use computerized touch panel for parameter control, recipe entry and data logging.

PM2000 process module online visualization

Features

Single wafer, Plasma etch & PECVD systems for R&D, Failure Analysis, MEMS
Compact plasma sources, RIE-ICP-PECVD, etch, descum and deposition processes
Max 200 mm wafer processing
Vacuum load lock extendable
Small foot print, gas system and power box fully integrated

Benefits

Compact system (footprint 80 x 100 cm incl. gas handling system)
RIE system can be upgraded to a RIE/ICP system
Optional with vacuum load lock

Dimensions

80 x 100 x 167 cm (w x d x h)
Gas handling system and generator(s) included in the system

Reactor

Aluminum reactor suitable for processing wafers up to 200 mm
Optional electrostatic chuck with helium backside cooling
Control System
Automatic RF tuning
Baratron pressure gauge for independent pressure control
Standard 2 mass flow controllers (optional up to 8)
Windows ® compatible
Optional optical or laser endpoint detection

Safety

CE approved